Point defects in As‐grown and ion implanted GaAs probed by a monoenergetic positron beam

Defects in ion implanted GaAs were studied by monoenergetic positron beams. From measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy, it was found that a species of defects strongly depends on a species of implanted ions. Native defects in GaAs wafers were also studied. The present investigation shows that positrons provide a sensitive and nondestructive probe for the detection of both vacancies and interstitials.