Nanostructures bilayer ZnO/MgO dielectrics for metal–insulator–metal capacitor applications

Bilayer ZnO/MgO dielectrics for metal–insulator–metal (MIM) capacitor application were successfully deposited using simple chemical technique which is sol–gel spin coating method with different annealing temperatures. Important criteria in determining good dielectric layer have been investigated which include structural, electrical and dielectric properties. Cubic-like grain was observed for films annealed at 400 and 425 °C which enhance the carrier density and polarization that resulted in high k value produced. Bilayer film annealed at 475 °C improved in small surface roughness (17.629 nm), minimum leakage current density (~10−8 A cm−2) and high resistivity (3.14 × 105 Ω cm). Dielectric constant, k was varied with frequency and k value was found to be 5.09 at 10 kHz. The results obtained in this study indicated that film annealed at temperature of 475 °C is suitable to be used as dielectrics for MIM capacitor application.