High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability

We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M2 for the devices is almost unchanged as the light power and temperature increase. The almost constant M2 results from the p-doped QD active region.