Oxygen Diffusion in Bi 2 O 3 -doped ZnO

O diffusion profiles were established by secondary ion mass spectrometry (SIMS). The results show an increase in the oxygen diffusion in the Bi 2 O 3 -doped ZnO, when compared to the oxygen diffusion in the undoped ZnO polycrystal under the same experimental conditions, both in bulk and in grain-boundaries. Moreover, it was observed that the higher the Bi 2 O 3 concentration, the higher the oxygen diffusion. These results suggest that the incorporation of Bi 2 O 3 increases the interstitial oxygen concentration which agrees with an interstitial diffusion mechanism both in bulk and in grain-boundaries.