Old Web
English
Sign In
Acemap
>
Paper
>
Influence of Reaction Heat on SiC Epitaxial Reactor Cleaning Using ClF 3 Gas
Influence of Reaction Heat on SiC Epitaxial Reactor Cleaning Using ClF 3 Gas
2019
Masaya Hayashi
Hitoshi Habuka
Keisuke Kurashima
Hideki Ito
Shinichi Mitani
Ichiro Mizushima
Yoshinao Takahashi
Keywords:
Silicon carbide
Metallurgy
Epitaxy
Materials science
Dry etching
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]