Passivation protecting structure, light emitting diode and manufacturing method thereof

The invention discloses a passivation protecting structure, a light emitting diode and manufacturing methods thereof. The passivation protecting structure comprises a first passivation film, wherein the first passivation film is a single layer or laminated layers on at least a part of the surface of a semiconductor structure, and the single layer or each layer of the laminated layers of the first passivation film comprises at least one of a polymer layer with an insulation characteristic, an organic complex layer or a composite layer formed by the polymer layer and the organic complex layer. The passivation protecting structure adopts an organic passivation film for improving density, step coverage degree and adhesivity of the passivation film.