Method of manufacturing cmos transistor

PURPOSE: A method for manufacturing a complementary metal-oxide-semiconductor(CMOS) transistor is provided to remove the damaged part in an n-type metal-oxide-semiconductor(MOS) transistor using a mixed solution of ammonium hydroxide, hydrogen peroxide, and deionized water. CONSTITUTION: An insulating layer(110) is formed on a substrate(100). A conductive layer is formed on the insulating layer. A mask pattern, which exposes an n-type MOS transistor region, is formed on the conductive layer. Dopant is implanted to the conductive layer of the n-type MOS transistor region, such that a damaged part is generated on the upper part of the conductive layer. The conductive layer is patterned to form an n-type MOS transistor gate(120n) and a p-type transistor gate(120p).