Study on the transport properties of MnGe(As1−xPx)2 grown on GaAs(1 0 0)

Abstract We have successfully grown MnGe(As 1− x P x ) 2 on GaAs(1 0 0) by molecular beam epitaxy (MBE) with a P 3d /As 2p XPS peak ratio ranging from 2.2 to 8.5. The transport properties of these MnGe(As 1− x P x ) 2 films have been studied by Hall measurement and resistance measurement. The resistance measurements suggest the samples are semiconductors. The Hall slopes at high fields are positive, indicating carriers in the film are p-type. All the samples show anomalous Hall effects with negative Hall resistance, and the Hall resistances increase rather than decrease with temperature. Magnetoresistances (MRs) have positive sign and its MR ratio increases with temperature in the range from 300 to 380 °C.