MOSFET asymmetry and gate-drain/source overlap effects on hot carrier reliability

The MOSFET gate-drain/source overlap is a critical factor in device performance. An understanding of trade-off between performance and reliability is important in process development. It is found that although the reduction of overlap can improve the performance, there is a sharp decrease in hot carrier reliability when the overlap is decreasing. More importantly we have found that the MOSFET asymmetry can degrade reliability even worse if overlap is small. The MOSFET asymmetry, gate-drain/source overlap and hot carrier reliability are studied on 90 nm technology.