dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors

Presented in this letter are measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors. The dc kink effect, which results in a sharp increase of the dc output conductance, has been eliminated in structures grown with a low AlInAs V:III flux ratio. The kink effect is a low‐frequency mechanism that is not present at microwave frequencies and is attributed to trapping phenomena in the AlInAs.