InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

Abstract InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R 0 A are 8.89 pA (2.2 × 10 −8  A/cm 2 ) and 3.9 × 10 5  Ω cm 2 at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10 12  cm Hz 1/2  W −1 at 1.06 μm wavelength. Comparing to the reference In 0.53 Ga 0.47 As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.