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Acemap > Paper > Initial oxidation of 6H-SiC (0001) (root 3x root 3)-R30 degrees and 3x3 surfaces studied by AES and RHEED

Initial oxidation of 6H-SiC (0001) (root 3x root 3)-R30 degrees and 3x3 surfaces studied by AES and RHEED

2004 
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