Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

We propose a new type of dual-pole triple-throw double heterojunction monolithic microwave integrated circuit (IC) switch for use in digital cellular phones. The IC we developed exhibits a low gate leakage current of 400 nA and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a frequency of 950 MHz. Measured P/sub 1 dB/ was about 36 dBm, and a low distortion of 65 dBc was also obtained.