High power semiconductor laser of Al-In-P or Al-Ga-In-P material and making method

A large power semiconductor laser of AlInP or AlGaP includes a substrate, a buffer layer set on the substrate, a lower clad processed on the buffer layer, a lower waveguid layer set on the lower clad for limiting the optical field, an active zone a light emitting zone processed on the lower waveguid layer, an upper waveguide layer processor on the active zone for limiting the optical field, an upper clad set on the upper waveguide layer, a P GaInP layer on the upper, a type P GaAs ohm contact layer set on the type p GaInP layer, a P face electrode on the ohm contact layer, an N face electrode set under the substrate.