In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors

Abstract High energy ion scattering (HEIS) has been used for in situ surface and interface studies of molecular beam epitaxial growth of metals and semiconductors on semiconductors. In the study of phase transitions during the initial growth and thermal desorption of Pb on Si(111), HEIS measurement has directly and accurately determined the metal overlayer coverage associated with various surface structures and clearly revealed SiPb interface relaxation and Pb island formation. These results contribute to an unambiguous interpretation of LEED patterns and STM images. HEIS has been used to monitor the homoepitaxial growth of Ge on Ge(111) through liquid metal media, and to characterize in situ the grown thin films. This leads to a better understanding of the growth mechanism and optimal growth conditions.