Process for depositing WSix films on high topography with a defined stoichiometry and thereby component produced

A method of producing Wolframsilizidschichten on a substrate having grooves with a high aspect ratio, and at a temperature of less than 400 ° C and a pressure of less than 6.65 kPa (50 Torr) from the gas phase of a tungsten-containing precursor and a silicon-containing precursor on the substrate and in the wells of a tungsten silicide is deposited, and the molar ratio of the silicon-containing precursor to the tungsten-containing precursor in the gas phase larger than is selected 500, and wherein the aspect ratio of the grooves is more than 20 and the edge coverage more than 50% is.