Influence of properties of Si 3 N 4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.