Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films
1985
Abstract DC conductivity and Hall coefficient studies were made on MIS structures of n-type Pb 0.8 Sn 0.2 Te thin films grown by a flash evaporation technique in the temperature range 77–400 K. The decrease in R H with positive gate field and increase in R H with negative gate field have been attributed to the accumulation and depletion of charge carriers due to bending of bands. Mobility-temperature data have been analyzed in terms of various scattering mechanisms.
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