Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films

Abstract DC conductivity and Hall coefficient studies were made on MIS structures of n-type Pb 0.8 Sn 0.2 Te thin films grown by a flash evaporation technique in the temperature range 77–400 K. The decrease in R H with positive gate field and increase in R H with negative gate field have been attributed to the accumulation and depletion of charge carriers due to bending of bands. Mobility-temperature data have been analyzed in terms of various scattering mechanisms.