Analysis of laser diode thermal properties with spatial resolution by means of the TRAIT method

Abstract The thermal resistance analysis by induced transient (TRAIT) method is a characterization technique which allows experimental evaluation of the total thermal resistance Rth of a semiconductor device and its assembling structure with a spatial resolution. This means that Rth can be known as a sum of several contributions due to various parts of the system. This technique is mainly based on the analysis of the system thermal dynamic behaviour. The capabilities of the method were demonstrated by applying the analysis to semiconductor laser devices in order to investigate the thermal properties and reliability of their packages.