A 130nm RFSOI technology with switch, LNA, and EDNMOS devices for integrated front-end module SoC applications

The cellular frequency spectrum has become increasingly complex with over 50 frequencies in LTE standards. To reduce costs in the front end module the switch has migrated from a III–V PHEMT base to a silicon solution in RFSOI. While many providers have focused on a 180nm base technology node for the RFSOI there has been an increasing move to more advanced nodes to solution the logic requirements of the cellular standards. In addition there has been a strong interest in migrating to an SOC solution in RFSOI. In this paper a 130nm RFSOI technology is presented with high performance and low noise body tied 1.5V NMOS for LNA devices with a novel method of body contacting, low Ron*Coff NMOS for antenna switch and state of the art EDNMOS with f T of 38GHz and BVdss of 14V BVdss for integrated PA application. Specific results presented include characterization of the switch, LNA, and Power Amplifier devices.