Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers
1999
A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN-AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These results demonstrate the potential of wide-bandgap semiconductors for robust power amplification. The potential for high-power, narrow-bandwidth, and regulated-temperature applications are also discussed.
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