Semiconductor Components for THz-TDS Systems Activated by Compact Fibre Lasers
2021
This contribution reviews the investigations on semiconductor optoelectronic components of terahertz time-domain-spectroscopy (TDS) systems that were performed over the last years at the laboratories of the Optoelectronics Department of the Centre for Physical Sciences and Technology in Vilnius, Lithuania. The first research topic was THz pulse emission from femtosecond laser excited semiconductor surfaces. By using an original experimental technique based on the laser source providing femtosecond optical pulses with the wavelength that can be changed over a wide range from 2600 to 350 nm, THz excitation spectra of numerous semiconductor crystals were investigated and compared. This research was complemented with experiments performed on the samples with different doping level and different crystallographic orientation, which has allowed to elucidate the microscopic origin of the effect of surface THz emission. In the second part of the article the main achievements in the development of dilute bismide based optoelectronic THz frequency range devices will be presented. Epitaxial layers of these semiconducting compounds grown on GaAs or InP substrates were shown to be suitable for the fabrication of ultrafast photoconductive antennas serving as THz radiation emitters and detectors activated by femtosecond pulses with the wavelengths from 1000 to 2000 nm that are typical for modern fiber laser oscillators.
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