Optical and Electrical Properties of Cu2ZnSnS4 Film Prepared by Sulfurization Method

Cu2ZnSnS4 (CZTS) films were prepared by sulfurization of sputtered Zn/Sn/Cu multilayer thin films. Raman peaks at 251 cm−1, 289 cm−1, 336 cm−1, and 362 cm−1 were detected, and the optical band gap energy of the CZTS was estimated to be about 1.53 eV. Energy-dispersive spectrometry and x-ray photoelectron spectroscopy reveal that the composition ratio of prepared CZTS film is close to stoichiometric. Photoresponse current measurements show persistent photoconductivity effect, with decay constants τ and β of 5.04 and 0.269, respectively.