Dual wavelength 650-780nm laser diodes

A Novel structure of dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures based on two kinds of materials AlGaAs and AlGaInP active layer, which are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 699nm and 794nm at the same time. Without face coating, the output power of the dual-wavelength laser is high as 50mW at 220mA. And the slope efficiency of these devices is about 0.42A/W.