Electrooptical Characterization of MWIR InAsSb Detectors

InAs1−x Sb x material with an alloy composition of the absorber layer adjusted to achieve 200-K cutoff wavelengths in the 5-μm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response, and J dark–V d measurements were taken as a function of temperature. Based on absorption coefficient information in the literature and spectral response measurements of the midwave infrared (MWIR) nCBn detectors, an absorption coefficient formula α(E, x, T) is proposed. Since the presently suggested absorption coefficient is based on limited data, additional measurements of material and detectors with different x values and as a function of temperature should refine the absorption coefficient, providing more accurate parametrization. Material electronic structures were computed using a k·p formalism. From the band structure, dark-current density (J dark) as a function of bias (V d) and temperature (T) was calculated and matched to J dark–V d curves at fixed T and J dark–T curves at constant V d. There is a good match between simulation and data over a wide range of bias, but discrepancies that are not presently understood exist near zero bias.