Grain Structure – Resistivity Relationship of Ru ALD Precursors

The atomic layer deposition of ruthenium has been previously reported with a wide variety of precursors. However, the search for a Ru ALD process that can deposit a film with a resistivity close to that of bulk Ru (~7 μΩ • cm) is ongoing, with an emerging interest in processes that can selectively deposit low-resistance Ru films. In this work, the grain structure and resistivity relationship for Ru ALD precursors Ru(IHD) 2 (CO) 2 and Ru(CpEt) 2 using O 2 as a coreactant is investigated using electrical measurements by four-point-probe, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction/reflectometry (XRD/XRR).