Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires

Precise wire width control is important in forming dense networks of narrow InGaAs ridge quantum wires (QWRs) by selective MBE growth on patterned InP substrates. In this paper, SEM, TEM, AFM, CL and PL measurements were carried out to clarify the QWR formation mechanism and to establish the method of wire width control. Formation of the arrow-head shaped QWR is due to evolution of (114)A facets caused by instability of (113)A facets during growth of the InAlAs layer. From PL peak energy positions, it has been found that the effective wire width can be controlled by precisely adjusting the growth time, or the grown thickness of the lower InAlAs layer.