Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells

GaAs/AlGaAs (110) multiple quantum wells (MQWs) were grown by solid source molecular beam epitaxy (MBE) with a valved arsenic cracker cell. The optical properties of the undoped GaAs (110) MQWs were studied by low-temperature photoluminescence and time-resolved photoluminescence (TRPL), which show that a strong electron spin relaxation dynamic is dependent on the excitation power and wavelength at room temperature. In this material, the predominant spin scattering mechanism ［D'yakonov-Perel' (DP) mechanism］ for conventional (100) QWs is substantially suppressed. The experiment data indicate that the electron-hole exchange interaction has a great impact on the spin relaxation time in GaAs (110) MQWs at room temperature.