Resonant Waveguiding and Lasing in Structures with InAs Submonolayers in an AlGaAs Matrix
1998
Abstract : This work studies optical properties III-V structures with SML InAs insertions in an AlGaAs matrix. Lasing under photoexcitation is demonstrated for the structure without external optical confinement. Lasing occurs on a low energy side of the exciton resonance at low excitation densities pointing to the importance of this structures for improved optical confinement in AIGaAs injection laser operating in the visiblel range, excitonic waveguides and self-adjusted microcavities.
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