1/ $f$ Noise Characteristics of MoS 2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

We report on the transport and low-frequency noise measurements of MoS 2 thin-film transistors (TFTs) with thin (2–3 atomic layers) and thick (15–18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS 2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/ $f$ noise in thick MoS 2 transistors is of the same level as that in graphene. The MoS 2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS 2 transistors with thick channels (15–18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS 2 TFTs.