Graph pattern decomposition method adopting triple patterning photoetching technology

The invention belongs to the field of design for manufacturability of semiconductor photoetching technologies, and particularly relates to a graph pattern decomposition method adopting a triple patterning photoetching technology. The method comprises steps of firstly, establishing a conflict graph through a rectangle expansion method, then randomly producing a three-colored initial solution, fixing one color in each turn of optimization, performing two-colored optimization on a conflict sub-graph of the rest two colors through a double patterning pattern distribution method, repeating the iterative optimization process until the current optimum solution is not undated for multiple times, and finally, repeatedly calling the above steps and selecting an optimal three-colored result as an output result. According to method, the existing double patterning pattern distribution method is adopted, an optimal strategy obtained through multiple computation is adopted, and a globally optimal solution is searched, so that the purpose of distributing a graph pattern through the triple patterning photoetching technology is realized.