On the nature of oscillations of Open Circuit Potential of silicon immersed in CuSO4/HF solution

Abstract Oscillations of Open Cirquit Potential (OCP) during immersion plating of silicon electrodes with copper has been recently discovered and ascribed to concurrent reactions of copper deposition at the semiconductor surface and silicon oxide growth/dissolution underneath. Here we present the results of studying forced OCP oscillations (in the presence of sinusoidal external excitation) and discuss the physical mechanism of the oscillatory process