Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW

Abstract In x Ga 1− x N (0  x x Ga 1− x N SB-templates. The SB approach results in superior material quality relative to the bulk grown InGaN, mainly due to its ability to avoid the inclusion of indium-rich clusters and V-pits in the SB templates. The SB approach slows down the relaxation processes and templates as thick as 750 nm are not fully relaxed. We are reporting on methods to enhance the relaxation processes in In x Ga 1− x N SB-templates. Finally, when In x Ga 1− x N templates with 0 ≤  x  ≤ 0.16 are used as substrates for InGaN/GaN multiple quantum wells, the emission wavelength is shifted from blue to green by changing the indium content in the In x Ga 1− x N SB-templates. To the best of our knowledge, the current results present the highest indium content reported in In x Ga 1− x N SB-templates.