Sapphire screen and production process thereof

The invention discloses a sapphire screen and a production process thereof. The sapphire screen comprises an outer screen layer with the thickness of 5-90 nm, a transition layer with the thickness of 40 nm-50 [mu]m and a sapphire layer which are arranged from outside to inside, and the sapphire layer is a single sapphire layer or a double-layer, three-layer or multi-layer composite structure prepared from sapphire and a composite material through a composite method; the sapphire layer adopts an Al2O3 matrix raw material with the purity of 99.999% and spectral pure dopant raw materials Fe2O3 and TiO2 to obtain a ferric-titanium-doped sapphire wafer which represented as Ti,Fe:alpha-Al2O3. The sapphire screen obtained by the growth method provided by the invention has the characteristics that the cut and polished wafer has the bending strength at four points of higher than 1500 MPa, has the spectrum transmittance in a range of 300 nm-5000 nm of as high as 85%, and has the advantages of higher hardness and more excellent scratch resistance; and an application of the commercial sapphire screen material with high bending strength and excellent optical performance can be realized.