Electrically detected magnetic resonance in p-n junction diodes

Abstract Electrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g -values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The lowest g -value (1.965) is out of the range of carrier, band-tail, and dangling Si orbital centers; it may indicate metallic ions.