Growth of diamond films at low pressure using magneto-microwave plasma CVD

Abstract Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 10 11 cm -3 ) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH 4 /H 2 or CO 2 /H 2 mixture as a reaction gas, diamond films have not been obtained. However, with CH 4 + CO 2 /H 2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.