Multi-value memory unit based on common control for conductive wires and polarization

The invention relates to a multi-level memory unit based on common control for conductive wires and polarization. The multi-level memory unit comprises a bottom electrode, a ferroelectric function layer, a semiconductor function layer and a top electrode from bottom to top successively; and a multi-level memory feature of the unit is realized via migration of metal atoms of the top electrode in the semiconductor function layer and polarization overturn and change of oxygen vacancy concentration of the ferroelectric function layer. Due to the multi-level memory feature, non-destructive reading is realized, the memory density is high, operation is simple, the operation voltage is low, the multi-level memory unit is compatible with Si technology and helpful for industrialization, low-voltage writing and reading are realized, and the problems that a ferroelectric tunnel junction, in which a probe is used for writing and reading the multi-level memory, is high in substrate and electrode cost and incompatible with the Si technology are solved.