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Acemap > Paper > Influence of purge, time of waiting and TiCl 4 dosing time in a low-pressure atomic layer deposition (ALD) reactor on properties of TiO 2 layer

Influence of purge, time of waiting and TiCl 4 dosing time in a low-pressure atomic layer deposition (ALD) reactor on properties of TiO 2 layer

2017 
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