Fabrication of field emitter array using focused ion and electron beam induced reaction

A 30 keV dual beam system with focused ion and electron beams has been used to develop a fast fabrication process of field emitter arrays (FEAs). The gate opening was fabricated by reactive focused ion beam etching. Pt cathode tips were deposited through gate opening using electron beam induced chemical reaction. Pt tips fabricated in the over-etched Si FEA showed field emission. A prototype of a nanometer-sized FEA was fabricated using a dual beam technique with FIB etching and electron beam induced deposition.