A semiconductor device having a floating semiconductor region and integrated circuit

The semiconductor device (100, 360, 400, 460, 490, 580, 610, 640, 670, 700, 760, 790), comprising: a first trench (101) and a second trench (102) extending from a surface (104) is formed in a semiconductor body (103); a body region (109) of a first conductivity type, which adjoins a first side wall (110) of the first trench (101) and to a first side wall (111) of the second trench (102), wherein the body region (109) a channel region (116 ), which is adjacent to a source structure (112) and in its conductivity over a gate structure (107) is controllable, wherein the channel region (116) is formed (on the first side wall 111) of the second trench (102), but not at the first side wall (110) of the first trench (101); and an electrically floating semiconductor region (120) of the first conductivity type, on the first trench (101) adjacent to and having a bottom surface, the deeper inside of the semiconductor body (103) is formed as the bottom of the body region (109), wherein: an electrode structure (106) in the first trench (101) or is electrically connected to or electrically floating the source structure (112) of the first trench (431) with a dielectric material (452) is filled, and a lower surface of the electrically floating semiconductor region (120) is formed deeper within the semiconductor body (103) than the bottom of the first trench (101).