Lateral diffusion of carriers and screening measurements in GaInAsP/GaInAs MQW photorefractive devices at 1.55 /spl mu/m

We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 /spl mu/m in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating GaInAsP/GaInAs multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. On this structure, we investigated the carrier lateral diffusion, the applied electric field screening and the diffraction efficiency.