Gate material engineered‐trapizoidal recessed channel MOSFET for high‐performance analog and RF applications

In this article, device characteristics of gate material engineered-trapezoidal recessed channel (GME-TRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency (FT) and parasitic capacitances, and result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high-speed logic and RF applications. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 694–698, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25012