Investigation of V2O5/Ge8Sb92 multilayer thin film for high-data-retention and high-speed phase change memory applications

In this paper, the V2O5/Ge8Sb92 multilayer thin films were prepared and investigated. Compared with Ge8Sb92, V2O5/Ge8Sb92 film had a higher crystallization temperature and a larger conductivity activation energy. The surface roughness for V2O5/Ge8Sb92 film was small before and after crystallization. The crystallization of V2O5/Ge8Sb92 was inhibited and the grain size was only 5.0 nm. A higher stability and smaller grain made V2O5/Ge8Sb92 multilayer film a potential application in high-density phase change memory.