Large Area, Patterned Growth of 2-D MoS2 and Lateral MoS2 - WS2 Heterostructures for Nano- and Opto-electronic Applications

The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2-D MoS2thin films on device ready SiO2/Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoS2has been achieved. Furthermore, uniform films with exceptional conformality over 3-D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2-D MoS2and WS2thin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.