ESD Characterization and Modeling of Cascoded, Silicided FETs in a 22nm FDSOI Technology

Cascoded FETs in FDSOI under ESD stress are characterized and modeled for the first time. A novel characterization structure is developed to regulate channel modulation precisely. ESD failure voltage (Vt2) modulation of cascoded FETs is explained and excellent model to hardware correlation is demonstrated.