Schottky Barrier Height of Ti on Strained Layer Si/Si1–xGex Films

The Schottky barrier height of Ti on p-type Si1–xGex/Si and Si have been investigated-in the temperature range 110–250 K using the current voltage technique. Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD) were used to characterize the reaction between Ti and SiGe alloys.