Non volatile memory device and method for manufacturing the same

The present invention has been to provide a non-volatile memory device and a manufacturing method thereof capable of, and to simplify the electrode wiring process, reducing the area of ​​the drain select line occupying, non-volatile memory device manufacturing method comprising a plurality of active layers of the present invention and a step of forming a stacked multi-layer film in turn a plurality of insulating layers; Forming a step-like bit line connection by etching one end of said multilayer film; Forming a plurality of strings by etching the multi-layer film; And forming a plurality of bit lines coupled to the bit line connecting the above-described present invention, select a drain select leads the bit line and the multi-layered strings that with all of the strings of the same string layer at the same time line Since the use and enables selection of a multilayer string, even if the increase in the number of the active layers to be laminated is not increased area of ​​the drain select line consumption, it is possible to improve the degree of integration.