Non volatile memory device and method for manufacturing the same
2010
The present invention has been to provide a non-volatile memory device and a manufacturing method thereof capable of, and to simplify the electrode wiring process, reducing the area of the drain select line occupying, non-volatile memory device manufacturing method comprising a plurality of active layers of the present invention and a step of forming a stacked multi-layer film in turn a plurality of insulating layers; Forming a step-like bit line connection by etching one end of said multilayer film; Forming a plurality of strings by etching the multi-layer film; And forming a plurality of bit lines coupled to the bit line connecting the above-described present invention, select a drain select leads the bit line and the multi-layered strings that with all of the strings of the same string layer at the same time line Since the use and enables selection of a multilayer string, even if the increase in the number of the active layers to be laminated is not increased area of the drain select line consumption, it is possible to improve the degree of integration.
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI