High performance deep-submicron n-MOSFETs by nitrogen implantation and in-situ HF vapor clean

This study demonstrates high performance and reliable deep-submicron n-MOSFETs with ultra-thin gate oxide prepared by combining with nitrogen gate electrode implantation and native-oxide-free in-situ HF vapor pre-oxidation cleaning. Our results indicate that the performance and reliability, including the leakage current of the ultra-thin gate oxide, the drain current (I/sub d/), transconductance (G/sub m/), charge pumping current (I/sub cp/), stress induced leakage current (SILC), and hot carrier reliability of n-MOSFETs with 4 nm thin gate oxides are all significantly improved.