Profile predictions in dry-etching by a new surface reaction model

A new simulational model for dry-etching process has been developed. Ever-changing adsorbed particle layers on the substrate surface are considered. Introductions of self-consistent reemission flux and extensions to hole geometries are made. Silicon-dioxide etching by hydrofluorocarbon gases is examined. Hydrofluorocarbon radicals play a role not only in polymerization but also as etchants under ion bombardment. Simulational results of surface profiles after etching show good match with experimental data for both an overhang test structure and trench/hole configurations with dimensions smaller than one micrometer. >