Performance boost for In 0.53 Ga 0.47 As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

We report the first demonstration of a strained In 0.53 Ga 0.47 As n-MOSFET incorporated with a silicon nitride (SiN) liner stressor. High intrinsic tensile stress of 1.5 GPa in a 50 nm thick SiN was used for introducing lateral tensile strain in the In 0.53 Ga 0.47 As channel. SiN liner stressor was shown to provide significant drive current enhancement for the first time. In addition, an advanced gate dielectric technology (with SiH 4 + NH 3 treatment) was used for achieving low interface state densities for HfAlO gate dielectric formed on In 0.53 Ga 0.47 As. Strained In 0.53 Ga 0.47 As n-MOSFETs with good device performance are reported.